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Million Cycle Overwritable Phase Change Optical Disk Media

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Abstract

GeTe-Sb2Te3-Sb pseudo ternary components alloy shows laser induced fast crystallization speed. Increasing the Sb concentration leads to higher crystallization temperature around 180°C. Thin film disk structure of 20nm active layer produce stable bit error rate characteristics of more than million cycle over-write.

© 1989 Optical Society of America

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