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Conferences > OECC > 1996 > 16D2 > 16D2.1
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 16D2.1

GaInAsP/InP Multiple-Microcavity Laser for Low Threshold Operation

Shigehisa Arai

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Abstract

A new type laser, which consists of multiple-microcavity structure formed by an etching of very narrow vertial grooves between very short active elements, was proposed for low threshold current operation, and a room-temperature CW operation with threshold current density of 230A/cm2 was obtained for 1.5μm wavelength GaInAsP/InP compressively strained MQW structure laser with the total cavity length of 60μm.

© 1996 IEICE

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