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  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 16D1.5

Continuous-Wave Operation of Vertical-Cavity Surface-Emitting Laser on Si Substrate by MOCVD

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Abstract

We have demonstrated the first cw operation of AlGaAs/GaAs vertical-cavity surface-emitting laser on Si substrate by MOCVD. Under cw condition at 150 K, this laser has exhibited a cw threshold current of 82 mA (4.2 kA/cm2).

© 1996 IEICE

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