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Conferences > OECC > 1996 > 18D4 > 18D4.3
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 18D4.3

High quantum efficiency and low threshold current of 1.55µm strained InGaAsP/InGaAlAs MQW laser with InAlAs electron stopper

H. Murai, Y. Matsui, Y. Ogawa, and T. Kunii

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Abstract

The authors show novel high internal quantum efficiency (89%) and low threshold current operation of laser consisted of eight strained InGaAsP/InGaAlAs quantum wells with an InAlAs electron stopper.

© 1996 IEICE

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