Calculation of optical absorption coefficients in an extremely shallow quantum well structure under electric fields

Sungsoo Park; O'Dae Kwon

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 18P.2

Calculation of optical absorption coefficients in an extremely shallow quantum well structure under electric fields

Sungsoo Park and O'Dae Kwon

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
ISBN:

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Poster Session (18P)

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S. Park and O. 'D. Kwon, "Calculation of optical absorption coefficients in an extremely shallow quantum well structure under electric fields," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 18P.2.

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Abstract

Calculated resonance levels in an extremely shallow quantum well shows that the quantum well characteristics are lost as applied electric field increases, and the optical transition rates show a long absorption tail typically observed in experiments.

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