The interpretation of the temperature dependence of photoluminescence intensity for MQW structures

Y. Ishitani; H. Hamada; E. Nomoto; T. Tanaka; S. Minagawa

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 18P.26

The interpretation of the temperature dependence of photoluminescence intensity for MQW structures

Y. Ishitani, H. Hamada, E. Nomoto, T. Tanaka, and S. Minagawa

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
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Poster Session (18P)

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Y. Ishitani, H. Hamada, E. Nomoto, T. Tanaka, and S. Minagawa, "The interpretation of the temperature dependence of photoluminescence intensity for MQW structures," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 18P.26.

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Abstract

The temperature dependence of PL intensity for AlGaInP/GaInP-MQWs with or without Al_xIn_1–xP barrier layers in cladding layers is studied. The transfer of carriers is subjected to the process via Γ_c point.

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