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Conferences > OECC > 1996 > 19A1 > 19A1.5
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 19A1.5

Very Low Dark Current InGaAs MSM-PD with DoubleSchottky Barrier Enhancement Layers

H.-W. Zhu, C.-X. Shi, and Y.-X. Chen

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Abstract

In this paper it is shown that the dark current of InGaAs MSM photodetectors ran be greatly reduced with the structure of double Schottky barrier enhancement layers. The lowest dark current of 4.7nA (5V) was obtained.

© 1996 IEICE

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