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We fabricated an InGaAs metal-semiconductor-metal (MSM) photodetector bonded on Si substrate by Benzocyclobutene bonding method. The responsivity of 0.035 A/W at 1.55 μm-wavelenght and the dark current of 29 nA at the bias voltage of 6V were obtained. The bandwidth of 3 GHz was obtained at the bias voltage of 10 V.
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