Development and Performance of Red and Deep Red Vertical Cavity Surface Emitting Lasers

J. A. Lott; Yong-Hee Lee; Hyun-Kuk Shin

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 19D1.2

Development and Performance of Red and Deep Red Vertical Cavity Surface Emitting Lasers

J. A. Lott, Yong-Hee Lee, and Hyun-Kuk Shin

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
ISBN:

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VCSEL (19D1)

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J. A. Lott, Y. Lee, and H. Shin, "Development and Performance of Red and Deep Red Vertical Cavity Surface Emitting Lasers," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 19D1.2.

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Abstract

The development of red and deep red vertical cavity surface emitting lasers with peak emission wavelengths from 620 to 800 nm is reviewed. The performance characteristics of gain guided and selectively oxidized device structures are compared.

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