Design of Low-Threshold Oxide-confined Vertical Cavity Surface Emitting Lasers

H. Bissessur; T. Mukaihara; M. Abe; F. Koyama; K. Iga

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 18P.38

Design of Low-Threshold Oxide-confined Vertical Cavity Surface Emitting Lasers

H. Bissessur, T. Mukaihara, M. Abe, F. Koyama, and K. Iga

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
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Poster Session (18P)

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H. Bissessur, T. Mukaihara, M. Abe, F. Koyama, and K. Iga, "Design of Low-Threshold Oxide-confined Vertical Cavity Surface Emitting Lasers," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 18P.38.

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Abstract

A novel model is presented to examine the low-threshold limit of oxide-confined vertical cavity surface emitting lasers including carrier diffusion and diffraction losses. Moreover, the carrier diffusion length is experimentally estimated in InGaAs quantum wells.

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