Abstract
GalnAs with its electron-hole mobility ratio of ~20-25 and a band gap of 0.75 eV is the best material to make an uncooled photoconductive detector (PcD) for detection of 1.5-μm light. In addition, GalnAs has a 50% higher low-field mobility than GaAs for the same doping level and a peak drift velocity of 2.1 × 107 cm/sec at an electric field strength of 3.8 kV/cm.
© 1981 Optical Society of America
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