Abstract

Since the report of the first In_0.53Ga_0.47As PIN/FET integrated optoelectronic device¹ at the 1980 Integrated Optics Meeting many improvements have been made. Progress in materials and fabrication technology has resulted in increased JFET transconductance values of 50 mS/mm for a gate length of 7 μm, while at the same time maintaining a low dark current PIN photodiode (<100 nA). A wide variety of devices with different doping levels and geometries have been prepared. The characteristics of these devices will be presented and investigations of parameter values required for simultaneous optimization of the PIN photodetector and the coupled JFET will be discussed.

© 1982 Optical Society of America