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Conferences > OFC > 2023 > W1A > W1A.6

Low dark current backside-illuminated photodiode for 200 Gb/s operation with 40 µm wide alignment tolerance

Ryota Takemura, Daiki Tsubouchi, Akihito Ohno, and Yasuhiro Yamauchi

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Abstract

A backside-illuminated photodiode employing a semiconductor-buried structure is demonstrated at 200 Gb/s. The photodiode exhibited a 3dB bandwidth of 65 GHz, an effective aperture of 40 µm, and a dark current of 1 pA.

© 2023 The Author(s)

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