In0.52Al0.48As Based Single Photon Avalanche Diodes with Multiple M-Layers for High-Efficiency and Fast Temporal Responses

Po-Shun Wang; Yu-Ying Hung; Tzu-Yuan Fang; Chin-He Kuo; Yuan-Hung Huang; Yan-Chieh Chang; Yi-Shan Lee; Yi-Shan Lee; Jin-Wei Shi

doi:10.1364/OFC.2023.W1A.7

Optical Fiber Communication Conference (OFC) 2023
Technical Digest Series (Optica Publishing Group, 2023),
paper W1A.7
•https://doi.org/10.1364/OFC.2023.W1A.7

In_0.52Al_0.48As Based Single Photon Avalanche Diodes with Multiple M-Layers for High-Efficiency and Fast Temporal Responses

Po-Shun Wang, Yu-Ying Hung, Tzu-Yuan Fang, Chin-He Kuo, Yuan-Hung Huang, Yan-Chieh Chang, Yi-Shan Lee, and Jin-Wei Shi

Optical Fiber Communication Conference 2023

San Diego California United States
5–9 March 2023
ISBN: 978-1-957171-18-0

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Advanced Photodetectors (W1A)

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P. Wang, Y. Hung, T. Fang, C. Kuo, Y. Huang, Y. Chang, Y. Lee, and J. Shi, "In0.52Al0.48As Based Single Photon Avalanche Diodes with Multiple M-Layers for High-Efficiency and Fast Temporal Responses," in Optical Fiber Communication Conference (OFC) 2023, Technical Digest Series (Optica Publishing Group, 2023), paper W1A.7.

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Abstract

Multiple multiplication-layers SPADs with excellent performances in terms of high-efficiency (>74%), neat impulse response time (101ps), and short hold-off time (83ns@<1% afterpulsing) can be achieved simultaneously with a simple passive quenching circuit under gated-mode operations.

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