Abstract

Free carrier compensation by ion implantation is an important processing technology for the formation of infrared optical waveguides for multiplexing applications. This process leads to a cutoff condition for waveguiding that is wavelength independent. Gallium phosphide is a very attractive semiconductor material for such multiplexing since it is transparent from the visible out to the far infrared. In addition, GaP, together with its related ternary and quarternary compounds, has many of the optical and electronic properties necessary for integration of optical devices into sensing and signal processing circuits. Experiments were performed to characterize the influence of various H⁺ implantation parameters on the carrier compensation process and to relate the resulting optical effects to electronic changes. The techniques developed for monitoring subsequent temperature processing can be utilized to fabricate optimized optical components.

© 1982 Optical Society of America