Abstract

Free carrier compensation by ion implantation is an important fabrication technology for the formation of infrared optical waveguides for a variety of applications. Gallium arsenide is a very attractive substrate material for optical fabrication since it is transparent out to the far infrared. In addition, GaAs, together with its related ternary and quarternary compounds, has many of the optical and electronic properties necessary for integration of optical devices into sensing and signal processing circuits. This will afford the ultimate merger of the VLSI electronics and GaAs optoelectronics, as well as the monolithic integration of microwave electronic devices such as gunn diodes and Schottky gate FET's, with GaAs optical components. Experiments were performed to characterize the influence of various H⁺ implantation parameters on the carrier compensation process and to relate the resulting optical effects to electronic changes. The design techniques utilized are applicable from 1 to 12 micron operating wavelengths and may be utilized in a variety of specific device applications.

© 1984 Optical Society of America