Abstract

Spectroscopic Ellipsometry is widely used to characterize optical thin multilayers films in a broad spectral range, from UV 250 nm to NIR 1.7 μm. Recently the use of optical multichannel array, OMA, as detector has reduced drastically the time of measure for a spectrum versus a simplex PMT detector ( ref 1 ). This enables to scan the angle of incidence or the surface mapping of the sample rapidly for homogeneity characterization of layers particularly useful for F.P.D. on line control. But this characterization comes too late and does not enable to correct the process of deposition in real time. In order to monitor in situ a growth or deposition of layers, single wavelength ellipsometers have been used (ref 2), also PEM spectroscopic ellipsometry have been utilized for very fast deposition, with less accuracy. One wavelength is not enough to get advantage of the full spectral range analysis, and of the spectral dispersion from UV to IR at same time.

© 1992 Optical Society of America