Abstract

The residual stress of Titanium dioxide (TiO₂) and Silicon dioxide (SiO₂) films on Silicon (Si) substrates prepared by Ion-Assisted-Deposition (IAD) were systematically investigated. The films were deposited using a Balzers 760 vacuum chamber equipped with a diffusion pump, substrate heaters, optical monitoring, crystal monitoring, and a gridless end-Hall ion source. Substrates were tooled in either a universal planetary drive with 6 planets (dia. 225 mm) or a rotating, umbrella shaped holder (dia. 800mm). A standard electron beam source was used to evaporate the TiO, TiO₂, or Ti₂O₅ starting materials for the TiO₂ films. The starting material for the SiO₂ thin-films was SiO heated with a resistant source. The end-Hall source produces a broad beam (30° half angle) with relatively high ion current densities (0.3 to 0.5 mA/cm²) at 400mm source to substrate distance.¹

© 1995 Optical Society of America