Abstract

Picosecond time-domain measurements of silicon integrated circuit interconnects were successfully performed using photoconductors integrated on-chip. Both bulk silicon and thin-film polycrystalline silicon photoconductors were studied. Standard integrated circuit fabrication techniques followed by shadow-masked, ion-beam irradiation were used to create photoconductor/interconnect structures. Starting materials used were 70 ft-cm n-type wafers and 16 Ω-cm p-type wafers. A subpicosecond pulsed laser system excited the photoconductors to produce and sample picosecond pulses on the Si substrate.

© 1985 Optical Society of America