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Transient Response Measurements with Ion-Beam-Damaged Si, GaAs, and InP Photoconductors

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Abstract

In recent years optoelectronic methods with the potential of making extremely high speed measurements of transient response in electronic devices and circuits have begun to be studied. In this paper we report correlation measurements using high speed photoconductor pulsers and sampling gates excited by femtosecond laser pulses. We examine experimentally some of the circuit limits inherent in these measurements, limits inherent in the photoconductors themselves, and limits in the transmission of high frequency signals in microstrip transmission lines.

© 1984 Optical Society of America

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