Abstract

The existence of the heterojunction and the recent development of methods for growing a variety of epitaxial ultrathin III-V semiconductor layers (wider-gap or narrower-gap, doped or undoped, abrupt or graded) enables the fabrication of sophisticated quantum-well heterostructures. In the past few years, one of these techniques, metalorganic chemical vapor deposition (MO-CVD), has become increasingly popular as a consequence of its versatility and economy. The chemistry of MO-CVD growth of III-V compounds was pioneered by Manasevit as early as 1968¹; however, it was Dupuis and Dapkus in 1977² who demonstrated that high quality GaAlAs/GaAs heterostructure lasers can be grown by MO-CVD.

© 1985 Optical Society of America