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Carrier-Carrier Interaction and Picosecond Phenomena in Polar Semiconductors

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Abstract

The effect of carrier-carrier interaction in semiconductors becomes important when high concentrations and short characteristic times are reached. By going to submicron dimensions and picosecond resolutions we are often in such situations. The details of energy and momentum relaxation are then crucial and can be stongly affected by the coulombic scattering among carriers and by the onset of collective phenomena.

© 1985 Optical Society of America

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