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Picosecond Carrier Dynamics in Semiconductors

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Abstract

Picosecond and more recently femtosecond spectroscopy is established as a powerful tool for the direct investigation of the dynamics of nonequilibrium charge carriers and phonons in semiconductors [1]. In this paper we will discuss some recent results of the effect of localization of electronic states on carrier dynamics. Three different systems with different nature and degree of localization have been chosen, namely: GaAs/GaAlAs quantum wells, amorphous semiconductors, and the quaternary compound III-V semiconductor GalnAsP.

© 1984 Optical Society of America

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