Abstract

Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport¹ it provides. In addition, the negative differential resistance regions which exist in the current-voltage (I-V) curve (peak-to-valley ratios of 3.5:1 at room temperature^2-4 and nearly 10:1 at 77 K have been measured) suggest that high-speed devices based on the peculiarities of the I-V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency oscillations⁵. In our laboratory we have been attempting to increase the frequency and power of these oscillators⁶, and others have worked toward a better understanding of the equivalent circuit of the device⁷ and the underlying processes responsible for the frequency response^8-10.

© 1987 Optical Society of America