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Conferences > PEO > 1989 > OSDA > OSDA206

Beryllium-Bombarded In0.53Ga0.47As and InP Photoconductors with High Responsivity and Picosecond Resolution

R. Loepfe, A. Schaelin, and H. Melchior

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Abstract

Small size In0.53Ga0.47As and Fe:InP photoconduc­tors with optimized Be3+-ion implantation reach response speeds of 2ps to 4ps, while maintaining responsivities of 0.006A/W and 0.02 A/W. The high speed of these devices is due to the Be-bombardement related introduction of recombination centers. The responsivity is inverse proportional to the speed of response and proportional to the mobility. This mobility appears to be dominated by bombardement related neutral impurity scattering.

© 1989 Optical Society of America

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