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Conferences > PEO > 1989 > OSDA > OSDA210

Photocurrent-Voltage Characteristics of Ultrafast Photoconductive Switches

S. Moss, J. Knudsen, R. Bowman, P. Adams, D. Smith, and M. Herman

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Abstract

We report measurements of photocurrent-voltage characteristics of ultrafast photoconductive switches fabricated on gallium arsenide, silicon with a buried oxide layer, and silicon-on-sapphire.

© 1989 Optical Society of America

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