Abstract
An extremely fast modulation of optical properties based on internal field screening due to virtual charge polarization in a dc-biased or built-in asymmetric quantum well structure is discussed with description of relevant optical nonlinearities caused by the virtual charge polarization. A possible device characteristic for electro-static ultrafast switch of quantum interference current through the virtual charge polarization is briefly described, as an application of this modulation scheme to ultrahigh speed optoelectronic devices.
© 1989 Optical Society of America
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