Abstract

The use of bandgap engineering techniques to tailor the perpendicular transport characteristics of layered semiconductor structures has resulted in a variety of new phenomena and devices concepts [1]. In particular the coherent interaction of electron waves reflected at interfaces gives rise to resonant tunneling effects which filter electrons of certain energy through the structure. A structure specifically designed for electron energy filtering is the variably spaced superlattice energy filter (VSSEF) in which the quantized states in adjacent quantum wells become aligned under appropriate bias conditions [2].

© 1991 Optical Society of America