Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Transient Simulation of Ultra-Small GaAs MESFET Using Quantum Moment Equations

Not Accessible

Your library or personal account may give you access

Abstract

Since the advent of the integrated circuits in the late 1950’s, the number of devices contained on a single chip has approximately doubled every three years and this process has caused semiconductor devices to be made smaller and smaller. However, little is understood about the physical limitations that will determine whether or not these devices are practical. These questions have opened a new field for semiconductor research and technology in which a great opportunity is provided to study many new physical phenomena, some of which have been described in [1-4], and exploring a new generation of device structures and system architectures for the potential application of Ultra Large Scale Integrated (ULSI) system in the near future.

© 1991 Optical Society of America

PDF Article
More Like This
Picosecond Radiation-Induced Current Transients In Digital GaAs Mesfets

Dale McMorrow, Arthur B. Campbell, and Alvin R. Knudson
ThA4 Picosecond Electronics and Optoelectronics (UEO) 1991

Transient Studies of Ballistic Acceleration of Electrons in a GaAs Quantum-Well Structure

W. Sha, T.B. Morris, W.J. Schaff, and K. E. Meyer
QPDP18 Quantum Electronics and Laser Science Conference (CLEO:FS) 1991

Optically controlled GaAs dual-gate MESFET and permeable base transistors

R. N. Simons and K. B. Bhasin
WK39 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.