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Picosecond Radiation-Induced Current Transients In Digital GaAs Mesfets

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Abstract

Single event upsets (SEUs) are transient errors that occur when energetic particles interact with sensitive areas of digital integrated circuit (IC) memories and logic. SEUs pose a serious reliability problem for space-based digital systems because of the large flux of energetic ions in cosmic rays and the Earth’s radiation belts. While a large amount of effort has been devoted to measurements of the time-integrated charge produced by the passage of an energetic ion (charge collection),1 it previously had not been possible to temporally resolve the dynamical evolution of the transients. Such information is essential for a complete understanding of SEU phenomena in complex ICs.

© 1991 Optical Society of America

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