Abstract

We report results on non-steady-state photoEMF in photoconducting Bi₁₂SiO₂₀ crystal for different average illumination levels. Experimental dependencies of both cut-off frequencies, amplitude of the output signal, and position of its maximum vs light in ensity are explained by remarkable increase of the accepter concentration at high light intensity. Different parameters of BSO samples, including Maxwell relaxation time, lifetime of the photocarriers, their diffusion length, and concentration in the conductive band are estimated from the experimental data obtained.

© 1993 Optical Society of America