Add to BibSonomyAbstract
Integration of active optical elements (GaAs-based multiple quantum-well pin diode modulators) with semiconductor microelectronics (GaAs-based doped-channel HFETs) is obtained. We discuss the improved sensitivity (less than 100 fJ optical input energies) and higher operation rates (to 650 Mb/s) that result from this combinations. We do so within the context of simple receiver/transmitter-pair circuits containing at most 5 transistors and 6 diodes.
© 1993 Optical Society of America
PDF ArticleMore Like This
T. K. Woodward, A. L. Lentine, L. M. F. Chirovsky, M. W. Focht, J. M. Freund, G. D. Guth, R. E. Leibenguth, L. E. Smith, L. A. D’Asaro, E. J. Laskowski, and S. S. Pei
PMC3.1 Photonics in Switching (PS) 1993
G. Livescu, G. D. Boyd, and L. M. E Chirovsky
CFF6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993
T. K. Woodward, L. M. F. Chirovsky, A. I. Lentine, L. A. D’Asaro, E. J. Laskowski, S. S. Pel, and F. Ren
CMC3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992