Abstract

We find that proton-implanted pin AlAs/GaAs asymmetric Fabry-Perot multiple quantum well modulators exhibit suppressed photocurrent responsivity while maintaining good modulation performance. We attribute this to a beneficial effect of the cavity resonance on an otherwise broadened exciton transition. We find photocurrent responsivity in devices implanted to 1 × 10¹³cm^–2 to be reduced by a factor of 57 from the unimplanted case. Asymmetric self-electro-optic effect devices having significant gain (28) and output contrast ratio (8) are demonstrated.

© 1993 Optical Society of America