Abstract
The relative influence of bound and photogenerated free carriers on refractive-index changes induced by subband-gap radiation is an important aspect in determining the limitations to all-optical switching. Here we report results of a comprehensive study of femtosecond time-resolved refractive index changes in the wideband-gap II–VI semiconductors ZnSe, CdS, arid CdS0.75Se0.25. The II-VI materials are of interest because of their large optical nonlinearities and the recent development of blue-green lasers. The optical source is an amplified colliding-pulse mode- locked (CPM) laser that generates 100-fs pulses at 620 nm and 20 Hz with energies up to 100 µJ.
© 1992 Optical Society of America
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