Abstract
Ultrafast excitation of n-doped GaAs layers leads to THz emission from coherent plasma oscillations.1 The emission frequency of this THz source is given by the simple plasma frequency formula ωp = (ne2/m*ϵ)1/2 wheren is the number of extrinsic electrons which are confined between the surface depletion field and the GaAs substrate.
© 1999 Optical Society of America
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