Abstract

The first electrically injected visible InAlGaP/AlGaAs vertical cavity surface emitting lasers (VCSELs) are reported. The structures consist of an InAlGaP optical cavity active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Pulsed room temperature lasing is achieved from 639 to 661 nm with test devices fabricated on unrotated wafers. Beam divergence is 6.5° (full angle) and device on-resistance is less than 15 Ω. At 650 nm, a current threshold of 30 mA at 2.7 V is measured with peak output power exceeding 3.3 mW for devices with a 20 μm emitting diameter.

© 1993 Optical Society of America