Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Photoreflectance Spectroscopy of InGaAs/GaAs Strained Superlattice Waveguides

Not Accessible

Your library or personal account may give you access

Abstract

In addition to quantum confinement [1], the effects of strain, resulting from the growth of lattice-mismatched materials, provide another means of tailoring the properties and performance of optoelectronic devices [2-6]. New properties for device applications, including birefringence and piezoelectric effects [7], are expected.

© 1989 Optical Society of America

PDF Article
More Like This
A Strained Superlattice Buffer Layer for InGaAs/GaAs Quantum Wells

T. E. VanEck, S. Niki, P. Chu, W. S. C. Chang, H. H. Wieder, A. J. Mardinly, K. Aron, and G. A. Hansen
WA3 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Γ-X Mixing in GaAs/AlAs Superlattices

M.-H. Meynadier
TuD1 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

InGaAs/lnAIGaAs Injection lasers grown on GaAs substrates

P. J. CALDWELL, R. P. LEAVITT, J. K. WHISNANT, S. C. HORST, and F. J. TOWNER
THM4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.