High Power 0.83µm Angle Stripe Superluminescent Diode

J. Niesen; P. H. Payton; C. B. Morrison; L. M. Zinkiewicz

doi:10.1364/SLA.1987.TuC2

Topical Meeting on Semiconductor Lasers
Technical Digest Series (Optica Publishing Group, 1987),
paper TuC2
•https://doi.org/10.1364/SLA.1987.TuC2

High Power 0.83µm Angle Stripe Superluminescent Diode

J. Niesen, P. H. Payton, C. B. Morrison, and L. M. Zinkiewicz

Semiconductor Lasers 1987

Albuquerque, New Mexico United States
10–11 February 1987
ISBN:

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J. Niesen, P. H. Payton, C. B. Morrison, and L. M. Zinkiewicz, "High Power 0.83µm Angle Stripe Superluminescent Diode," in Topical Meeting on Semiconductor Lasers, Technical Digest Series (Optica Publishing Group, 1987), paper TuC2.

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Abstract

Misaligning the waveguide structure of the twin channel laser (1) with respect to the wafer cleavage plane can create a condition that Fresnel reflection from the cleave will not be captured by the lateral waveguide (Figure 1). Most of the light reflected from the cleaved facet is thus refracted out from the waveguide and only single-pass gain is allowed.

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