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Measurement of Radiative, Auger, and Shunt Currents In 1.3µm Buried Heterostructure Lasers

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Abstract

Measurement of the carrier lifetime is a useful technique for determining the radiative and nonradiative current components in diode lasers.1,2 This paper describes an improved technique which permits measurement of the carrier lifetime even at very low current densities, and reports the first measurements as a function of bias current in 1.3µm buried heterostructure lasers.

© 1987 Optical Society of America

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