High Power 1.3 Micron Laser Diodes

E.A. Rezek; N. Adachi; D. Tran; L. Yow

doi:10.1364/SLA.1987.TuD6

Topical Meeting on Semiconductor Lasers
Technical Digest Series (Optica Publishing Group, 1987),
paper TuD6
•https://doi.org/10.1364/SLA.1987.TuD6

High Power 1.3 Micron Laser Diodes

E.A. Rezek, N. Adachi, D. Tran, and L. Yow

Semiconductor Lasers 1987

Albuquerque, New Mexico United States
10–11 February 1987
ISBN:

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GaInAsP Lasers (TuD)

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E. A. Rezek, N. Adachi, D. Tran, and L. Yow, "High Power 1.3 Micron Laser Diodes," in Topical Meeting on Semiconductor Lasers, Technical Digest Series (Optica Publishing Group, 1987), paper TuD6.

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Abstract

1.3 micron double channel planar buried heterostructure laser diodes have been fabricated which operate up to 110 mW CW. High power accelerated aging data is presented.

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