Aging Characteristics of Graded-Index Quantum Well Lasers Operated Junction-Up

R. G. Waters; R. K. Bertaska; S. J. Schultz

doi:10.1364/SLA.1987.WB9

Topical Meeting on Semiconductor Lasers
Technical Digest Series (Optica Publishing Group, 1987),
paper WB9
•https://doi.org/10.1364/SLA.1987.WB9

Aging Characteristics of Graded-Index Quantum Well Lasers Operated Junction-Up

R. G. Waters, R. K. Bertaska, and S. J. Schultz

Semiconductor Lasers 1987

Albuquerque, New Mexico United States
10–11 February 1987
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AlGaAs Lasers (WB)

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R. G. Waters, R. K. Bertaska, and S. J. Schultz, "Aging Characteristics of Graded-Index Quantum Well Lasers Operated Junction-Up," in Topical Meeting on Semiconductor Lasers, Technical Digest Series (Optica Publishing Group, 1987), paper WB9.

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Abstract

Semiconductor quantum well lasers have attracted much interest of late due to their unique properties¹⁻³ and early reliability results have been encouraging.⁴⁻⁶ We present life-test data on broad-area, oxide-defined graded-index quantum well (GRIN-QW) AlGaAs lasers operating cw and mounted in the junction-up configuration.

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