Abstract

2D arrays of light modulators operating at 980 nm have been designed, fabricated and tested for use in photonic neural networks. The device would also be useful in other photonic systems employing intensity SLMs such as joint transform correlators or optical cross-bar switches. The light modulators employ III-V semiconductor materials grown, using molecular beam epitaxy (MBE) , on GaAs substrates. Such III-V MQW modulators offer the high switching speeds required for the practical implementation of photonic systems.

© 1997 Optical Society of America