Abstract

High-speed optical network applications require high performance bipolar transistors that provide jitter-free operation. Over the last several years, SiGe HBTs have made significant strides in performance, surpassing that of the GaAs or InP HBT based technologies that are currently in production. In addition, the ability to seamlessly integrate these SiGe HBTs with high-performance CMOS and passives provides a power-performance advantage at a much reduced cost and higher yields, making SiGe BiCMOS as the technology of choice for a wide range of communication IC applications. In this paper we present the status, challenges, and future directions for the development and integration of ultra-fast SiGe HBTs with f_T/f_max surpassing 200GHz.

© 2003 Optical Society of America