Abstract

Time resolved optical measurements provide considerable information about carrier energy loss processes in semiconductors by measuring the time evolution of the carrier distribution function. Picosecond luminescence spectra using a streak camera or a Kerr shutter [1-3] and subpicosecond excite and probe absorption experiments [4,5] have been reported in GaAs. A comparable study in the smaller bandgap ternary and quaternary semiconductors would be of considerable interest from both the physics and the device viewpoint, but has not yet been reported.

© 1984 Optical Society of America