Abstract
Since Esaki1) and Tsu proposed the quantum well structure, many workers2) have interested in this structure in a physical and applicational points of view. In the quantum well structure the carriers are localized in one or a few quantum wells depending on well parameters such as the barrier hight, well size and well-to-well distance. Since this localization strongly affects to device performances, it is very important to understand the dynamics of localized carriers to design new devices.
© 1984 Optical Society of America
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