Abstract
The GaAs multiple quantum well structure (MQWS) is a new and unique nonlinear optical material [1]. The reduced dimensionality of the electron-hole system in the ultra-thin (100 Å) layers gives rise to clear excitonic absorption peaks which are observed even at room temperature [2]. The GaAs MQWS may form the basis for future high speed optoelectronic devices operating at room temperature.
© 1984 Optical Society of America
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