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Determination of Surface Recombination Velocities for CdS Crystals Immersed in Electrolyte Solutions by a Picosecond Photoluminescence Technique

Dan Huppert, Shimshon Gottesfeld, Zvi Harzion, Moshe Evenor, and Stephen W. Feldberg

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Abstract

The photoluminescence decay of an excited semiconductor depends on a number of factors: 1. The intensity and penetration depth of the exciting light. 2. Diffusion of photogenerated electron-hole (e-h) pairs into the semiconductor bulk. 3. Kinetics of band-to-band radiative recombination and non radiative recombination of e-h pairs at bulk or surface centers. 4. Photoluminescence reabsorption.

© 1984 Optical Society of America

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