Abstract

The success of high-data-rate optical communication systems relies on the modulation and switching capabilities of semiconductor laser oscillators and amplifiers. The fundamental physical processes which govern the dynamic device performance depend in a complex fashion on the material and design characteristics of diode lasers and are yet not well understood. In this context it is important to study the transient response of the laser gain to rapid changes of the injection current. We have used a new direct gain measurement technique to investigate the time evolution of the diode laser gain after the injection of an 80 ps current pulse.

© 1984 Optical Society of America