Abstract

The optical and electrical properties of quantum wires and quantum boxes have been the subject of growing interest not only for fundamental physics but also for modem device applications. Scattering suppression and high-mobility effect for these low dimensional superlattice have been described ^[1]. Outstanding structure in the photoluminescence of AlGaAs/GaAs quantum boxes has been observed and attributed to the spatial quantization of the low dimensional system ^[2]. In this paper we report time resolved photoluminescence studies on AlGaAs/GaAs quasi- quantum wires and boxes. Experiment results show a frequency shift of about 10 mev of the intrinsic luminescence to the high energy and a significant reduction of the carrier lifetime for the wires and boxes . The frequency shift is assigned to the low dimensional quantum confinement and the lifetime decrease may be attributed to the surface recombination.

© 1990 Optical Society of America