Abstract

Despite recent femtosecond measurements using pump-probe [1], photon echo [2], and photoluminescence [3], and theoretical studies [3,4] of screening, carrier-carrier scattering, such as electron-hole and electron-plasmon interactions, is still not well understood. We have made a series of femtosecond spectroscopic measurements on intrinsic, n-type, and p-type GaAs using the usual pump-probe arrangement and a novel three-pulse-pump-probe technique. By investigating the initial scattering and the cooling rate of hot carriers injected by 2-eV photons for densities (N) varied from the mid-10¹⁵ to 10¹⁹ cm^-3, we have acquired quantitative knowledge on electron-hole, electron-electron and electron-plasmon interactions.

© 1992 The Author(s)